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Investigation of CeO2 Buffer Layer Effects on the Voltage Response of YBCO Transition-Edge Bolometers

机译:CeO 2 缓冲层对YBCO过渡边缘辐射计电压响应的影响研究

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摘要

The effect on the thermal parameters of superconducting transition-edge bolometers produced on a single crystalline SrTiO (STO) substrate with and without a CeO buffer layer was investigated. Metal-organic deposition was used to deposit the 20-nm CeO buffer layer, whereas RF magnetron sputtering was applied to fabricate 150-nm-thick superconducting YBaCuO (YBCO) thin film. The critical transition temperature for both of the YBCO films was 90 K, and the transition width was ∼1.9 K. The bolometers fabricated from these samples were characterized with respect to the voltage phase and amplitude responses, and the results were compared with that of simulations conducted by applying a one-dimensional thermophysical model. It was observed that adding the buffer layer to the structure of the bolometer results in an increased response at higher modulation frequencies. Results from simulations made by fitting the thermal parameters in the model with and without an additional CeO layer were found to be in agreement with the experimental observations.
机译:研究了在有和没有CeO缓冲层的单晶SrTiO(STO)衬底上生产的超导过渡边缘辐射热测量仪的热参数的影响。金属有机沉积用于沉积20 nm CeO缓冲层,而RF磁控溅射用于制造150 nm厚的超导YBaCuO(YBCO)薄膜。两种YBCO薄膜的临界转变温度均为90 K,转变宽度约为1.9K。用这些样品制造的辐射热计针对电压相位和幅度响应进行了表征,并将结果与​​仿真结果进行了比较。通过应用一维热物理模型进行。观察到,在辐射热计的结构中添加缓冲层会导致在更高的调制频率下响应增加。通过将模型中的热参数拟合在有或没有额外的CeO层的模型中,得出的仿真结果与实验观察结果一致。

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